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FDS9933BZ - Dual P-Channel 2.5V Specified PowerTrench MOSFET

Datasheet Summary

Description

Max rDS(on) = 46mΩ at VGS = -4.5V, ID = -4.9A Max rDS(on) = 69mΩ at VGS = -2.5V, ID = -4.0A

Low gate charge (11nC typical).

High performance trench technology for extremely low rDS(on).

HBM ESD protection level >3kV (Note 3).

RoHS Complian

Features

  • General.

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Datasheet Details

Part number FDS9933BZ
Manufacturer Fairchild Semiconductor
File Size 265.18 KB
Description Dual P-Channel 2.5V Specified PowerTrench MOSFET
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Full PDF Text Transcription

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FDS9933BZ Dual P-Channel 2.5V Specified PowerTrench® MOSFET March 2008 FDS9933BZ Dual P-Channel 2.5V Specified PowerTrench® MOSFET tm -20V, -4.9A, 46mΩ Features General Description „ Max rDS(on) = 46mΩ at VGS = -4.5V, ID = -4.9A „ Max rDS(on) = 69mΩ at VGS = -2.5V, ID = -4.0A „ Low gate charge (11nC typical). „ High performance trench technology for extremely low rDS(on). „ HBM ESD protection level >3kV (Note 3). „ RoHS Compliant These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
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