FDS9933BZ datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

General Description
* Max rDS(on) = 46mΩ at VGS = -4.5V, ID = -4.9A
* Max rDS(on) = 69mΩ at VGS = -2.5V, ID = -4.0A
* Low gate charge (11nC typical).
* .

Application

load switching and power management, battery charging and protection circuits. Applications
* Battery Charging

Description

* Max rDS(on) = 46mΩ at VGS = -4.5V, ID = -4.9A
* Max rDS(on) = 69mΩ at VGS = -2.5V, ID = -4.0A
* Low gate charge (11nC typical).
* High performance trench technology for extremely low rDS(on).
* HBM ESD protection level >3kV (No.

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